We are seeking a motivated Master’s student to conduct an experimental investigation into the self-heating effect in semiconductor devices. This research will focus on thermal effects in circuits and characterization techniques, with the aim of improving the accuracy of self-heating models in circuit simulations.
With the increasing operating frequencies and miniaturization of electronics, transistors are densely packed, raising power densities and leading to transient self-heating effects. These effects alter device characteristics and impact circuit operation. Accurate modeling of self-heating requires precise characterization data, which is challenging to obtain due to the short time scales involved in advanced transistor devices like 3D FinFETs and Gate All Around FETs.
The goal of this thesis is to compare different characterization methods for analyzing the self-heating effect in advanced FinFET technologies and prepare these methods for Gate All Around technologies. This involves using both modeling approaches and experimental methods, including techniques like the AC-DC mixed method or pulsed measurements.
Interested candidates should submit their application, including a CV and a cover letter detailing their interest and relevant experience, to the supervisors listed above.
Work Model for this Role
This role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. * Job posting details (such as work model, location or time type) are subject to change.